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TYPICAL PERFORMANCE CURVES (R)
APT50GF120JRDQ3 1200V
APT50GF120JRDQ3
FAST IGBT & FRED
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. * Low Forward Voltage Drop * RBSOA and SCSOA Rated * High Freq. Switching to 20KHz * Ultra Low Leakage Current
E G C
E
S
OT
22
7
ISOTOP (R)
"UL Recognized"
file # E145592
* Ultrafast Soft Recovery Anti-parallel Diode
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT50GF120JRDQ3 UNIT Volts
1200 30 120 64 225 225A @ 1200V 521 -55 to 150 300
Amps
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 750A) Gate Threshold Voltage (VCE = VGE, I C = 700A, Tj = 25C) MIN TYP MAX Units
1200 4.5 5.5 2.5 3.1 0.75
2 2
6.5 3.0
Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
Volts
I CES I GES
mA nA
3-2006 052-6283 Rev A
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
5.5
100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT50GF120JRDQ3
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 75A TJ = 150C, R G = 1.0, VGE = Inductive Switching (25C) VCC = 800V VGE = 15V RG = 1.0 I C = 75A VGE = 15V MIN TYP MAX UNIT pF V nC
5320 555 300 10.0 495 50 290 225 36 70 355 65 7965 9895 4340 36 70 410 110 7890 14110 6040 J
ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
15V, L = 100H,VCE = 1200V
Turn-on Switching Energy (Diode)
6
TJ = +25C Inductive Switching (125C) VCC = 800V VGE = 15V RG = 1.0 I C = 75A
J
Turn-on Switching Energy (Diode)
6
TJ = +125C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT VIsolation Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 MIN TYP MAX UNIT C/W gm Volts
.24 .56 29.2
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.)
3-2006
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6283
Rev A
TYPICAL PERFORMANCE CURVES
160 140 IC, COLLECTOR CURRENT (A) 120 100 80 60 40 20 0 0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
V
GE
= 15V
350 300 250 200 150 100 50 0 15V 13V 12V 11V
APT50GF120JRDQ3
TJ = -55C IC, COLLECTOR CURRENT (A)
TJ = 25C
TJ = 125C
10V
9V 8V
160 140 120 100
FIGURE 1, Output Characteristics(TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
16 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 75A C T = 25C
J
0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
VCE = 240V VCE = 600V
IC, COLLECTOR CURRENT (A)
80 60 40 20 0 0
TJ = -55C
8 6 4 2 0 0 100
VCE = 960V
TJ = 25C
TJ = 125C
2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
200 300 400 500 GATE CHARGE (nC) FIGURE 4, Gate Charge
600
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
IC = 150A
4
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5
5
4
IC = 150A
3
IC = 75A IC = 37.5A
3
IC = 75A IC = 37.5A
2
2
1
1
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.15
0
8
25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 180
0
0
1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature
IC, DC COLLECTOR CURRENT(A)
VGS(TH), THRESHOLD VOLTAGE
1.10
160 140 120 100 80 3-2006 052-6283 Rev A 60 40 20 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50
(NORMALIZED)
45
td(ON), TURN-ON DELAY TIME (ns)
500
APT50GF120JRDQ3
40 35 30 25 20 15
VGE = 15V
td (OFF), TURN-OFF DELAY TIME (ns)
400
VGE =15V,TJ=125C VGE =15V,TJ=25C
300
200
10 VCE = 800V 5 R = 1.0 G 0
L = 100H
TJ = 25C or 125C
100
10 30 50 70 90 110 130 150 170 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 250
RG = 1.0, L = 100H, VCE = 800V
10 30 50 70 90 110 130 150 170 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current
140 120
RG = 1.0, L = 100H, VCE = 800V
0
VCE = 800V RG = 1.0 L = 100H
200
tf, FALL TIME (ns) tr, RISE TIME (ns)
TJ = 25 or 125C,VGE = 15V
100 80 60 40 20
TJ = 25C, VGE = 15V
150
TJ = 125C, VGE = 15V
100
50
50 70 90 110 130 150 170 10 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 50
EON2, TURN ON ENERGY LOSS (mJ) EOFF, TURN OFF ENERGY LOSS (mJ)
= 800V V CE = +15V V GE R = 1.0
G
0
10 30 50 70 90 110 130 150 170 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
14 12 10 8 6 4
TJ = 25C
= 800V V CE = +15V V GE R = 1.0
G
0
40
TJ = 125C
TJ = 125C
30
20
10
TJ = 25C
2
10 30 50 70 90 110 130 150 170 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current
SWITCHING ENERGY LOSSES (mJ)
0
10 30 50 70 90 110 130 150 170 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
50
= 800V V CE = +15V V GE R = 1.0
G
0
80 70 60 50 40 30 20 10 0 0
J
SWITCHING ENERGY LOSSES (mJ)
= 800V V CE = +15V V GE T = 125C
Eon2,150A
Eon2,150A
40
30
20
Eon2,75A
3-2006
Eon2,75A Eoff,75A Eoff,37.5A Eoff,150A Eon2,37.5A
10
Eoff,75A Eon2,37.5A
Eoff,150A Eoff,37.5A
Rev A
052-6283
20 15 10 5 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
125 100 75 50 25 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0
0
TYPICAL PERFORMANCE CURVES
1,000 500 C, CAPACITANCE ( F) Cies IC, COLLECTOR CURRENT (A)
250
APT50GF120JRDQ3
200
P
150
100 50 Coes Cres
100
50
10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.25 D = 0.9 ZJC, THERMAL IMPEDANCE (C/W) 0.20 0.7 0.15 0.5 0.10 0.3 0.05 0.1 0 0.05 10-5 10-4 SINGLE PULSE
Note:
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
50 FMAX, OPERATING FREQUENCY (kHz)
T = 75C
C
10 5
T = 100C
C
TJ (C)
0.655 Dissipated Power (Watts) 0.0307 0.595
TC (C)
0.175
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
F
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
T = 125C J D = 50 % V = 800V CE R = 1.0
G
fmax2 = Pdiss =
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
ZEXT
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
20 30 40 50 60 70 80 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1
10
052-6283
Rev A
3-2006
APT50GF120JRDQ3
APT60DQ120
10% td(on)
Gate Voltage
TJ = 125C
V CC
IC
V CE
tr
Collector Current
90% 10% 5%
Collector Voltage
A D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage
TJ = 125C td(off)
90% tf
Collector Voltage
10%
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
052-6283
Rev A
3-2006
TYPICAL PERFORMANCE CURVES
APT50GF120JRDQ3
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 85C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 75A Forward Voltage IF = 150A IF = 75A, TJ = 125C MIN
All Ratings: TC = 25C unless otherwise specified.
APT50GF120JRDQ3 UNIT Amps
60 73 540
TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 2.8 3.48 2.17
MIN TYP MAXUNIT ns nC
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
0.60 ZJC, THERMAL IMPEDANCE (C/W) 0.50 0.40 0.30 0.20 0.10 0 D = 0.9
60 265 560 5 350 2890 13 150 4720 40 -
IF = 60A, diF/dt = -200A/s VR = 800V, TC = 25C
-
Amps ns nC Amps ns nC Amps
IF = 60A, diF/dt = -200A/s VR = 800V, TC = 125C
IF = 60A, diF/dt = -1000A/s VR = 800V, TC = 125C
-
0.7
0.5
Note:
PDM
0.3 0.1 0.05 10-5 10-4
t1 t2
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.006
0.091
0.524
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
052-6283
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
Rev A
Dissipated Power (Watts)
ZEXT
0.149
0.238
0.174
3-2006
TJ (C)
TC (C)
200 trr, REVERSE RECOVERY TIME (ns) 180 IF, FORWARD CURRENT (A) 160 140 120 100 80 60 40 20 0 0 TJ = 175C TJ = 125C TJ = 25C TJ = -55C
400 350 300 250 200 150 100 50 120A
APT50GF120JRDQ3
T = 125C J V = 800V
R
60A 30A
1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage 7000 Qrr, REVERSE RECOVERY CHARGE (nC) 6000 5000 4000 3000 2000 1000 0 30A
T = 125C J V = 800V
R
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 50 45 40 35 30 25 20 15 10 5 0
T = 125C J V = 800V
R
0
120A
120A
60A
60A
30A
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 0.8 0.6 0.4 Qrr 0.2 0.0 trr IRRM Qrr
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change 90 80 70 60 IF(AV) (A) 50 40 30 20 10
Duty cycle = 0.5 T = 175C
J
trr
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature 350 CJ, JUNCTION CAPACITANCE (pF) 300 250 200 150 100 50 10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage 0 1
0
75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature
0
25
50
052-6283
Rev A
3-2006
TYPICAL PERFORMANCE CURVES
+18V 0V diF /dt Adjust
Vr
APT10035LLL
APT50GF120JRDQ3
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 32. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
3-2006 052-6283 Rev A
* Emitter/Anode
Collector/Cathode
* Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal.
* Emitter/Anode
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
APT's products are covered by one or more of U.S.patents 4,895,810 5 ,045,903 5 ,089,434 5 ,182,234 5 ,019,522
Dimensions in Millimeters and (Inches)
,503,786 5 ,256,583 4 ,748,103 5 ,283,202 5 ,231,474 5 ,434,095 5 ,528,058 and foreign patents. US and Foreign patents pending. A Rights Reserved. ll 5,262,336 6

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